Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction
V. Janardhanam, I. Jyothi, Sim-Hoon Yuk, Zummukhozol Munkhsaikan, Chel‐Jong Choi
Topics & Concepts
HeterojunctionMaterials scienceDiodeElectric fieldCondensed matter physicsAtmospheric temperature rangeRectangular potential barrierOptoelectronicsPhysicsThermodynamicsQuantum mechanics2D Materials and ApplicationsGaN-based semiconductor devices and materialsGa2O3 and related materials