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Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits

Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li

2021Microelectronics Journal16 citationsDOI

Topics & Concepts

CMOSTransistorDrain-induced barrier loweringMaterials scienceRing oscillatorNegative impedance converterMOSFETCapacitanceField-effect transistorSpiceElectrical engineeringStatic random-access memoryElectronic engineeringOptoelectronicsEngineeringVoltagePhysicsVoltage sourceElectrodeQuantum mechanicsFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits | Litcius