Low Reverse Conduction Loss β-Ga<sub>2</sub>O<sub>3</sub> Vertical FinFET With an Integrated Fin Diode
Yuxi Wei, Xiaosong Peng, Zhuolin Jiang, Tao Sun, Jie Wei, Kemeng Yang, Linyao Hao, Xiaorong Luo
Abstract
In this work, a reverse conduction beta-phase gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical FinFET with an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with little effect on the threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> ) and breakdown voltage (BV). Its electrical characteristics are studied and analyzed by Sentaurus technology computer aided design (TCAD) simulation. The integrated FD achieves metal–insulator–semiconductor (MIS)-like conduction/blocking characteristics owing to the Fin channel combined with an Ohmic contact anode. In the reverse conduction state, the FD first realizes a very low reverse turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula> ), and then forms the electron accumulation layers along the Fin sidewalls to improve reverse current capability; in the forward conduction and blocking states, the Fin channel of FD is pinched off by the MIS structures from the two sidewalls due to the work function difference between the source metal and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , without obvious influence on the forward conduction and blocking characteristics. Compared with the conventional FinFETs (C-FinFETs), the reverse conduction <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical FinFET (RC-FinFET) reduces the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula> by 71% with almost the same <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> and BV values. The proposed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> RC-FinFET achieves a low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula> of 0.45 V, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula> of 1.6 V, BV of 2545 V, and Baliga’s figure of merit (BFOM) up to 1.41 GW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . In addition, compared to a field effect transistor (FET) externally connecting a freewheeling diode, the RC-FinFET reduces the parasitic inductance and the total chip area, enhancing its application potential for high-power and low-loss power conversion systems.