Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel
Kitae Lee, Jong‐Ho Bae, Sihyun Kim, Jong‐Ho Lee, Byung‐Gook Park, Daewoong Kwon
Abstract
We demonstrate a novel ferroelectric-gate field effect transistor with recessed channel (R-FeFET) to improve memory window (MW), program/erase speed, long-time retention, and endurance simultaneously. Based on technology computer-aided design (TCAD) simulations including calibrated ferroelectric material (FE) parameters, it is revealed that the polarization is enhanced by the larger electric field (e-field) across the FE compared to a conventional planar FeFET, resulting in the wider MW and the faster program/erase speed. Moreover, the endurance/retention of the R-FeFET is expected to be improved as the e-field across the SiO2 interlayer is significantly reduced.