Negative differential resistance effect in resistive switching devices based on h-LuFeO<sub>3</sub>/CoFe<sub>2</sub>O<sub>4</sub> heterojunctions
Xinxin Ran, Pengfei Hou, Jiaxun Song, Hongjia Song, Xiangli Zhong, Jinbin Wang
Abstract
heterojunction-based RS devices; especially, the NDR is reproducible after hundreds of cycles at room temperature. This research provides an effective way for realizing the reproducible NDR effect in ferroelectric RS devices, and it may promote the development and application of RS devices with the NDR effect.
Topics & Concepts
HeterojunctionMaterials scienceOptoelectronicsResistive touchscreenModulation (music)RectificationFerroelectricityNanotechnologyVoltageComputer scienceElectrical engineeringPhysicsDielectricAcousticsEngineeringComputer visionAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric Materials