Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
Li Zhang, Zhong Xu, Han Jia, Lei Liu, Cong Ye, Yi Zhou, Wen Xiong, Yanxin Liu, Gang He
Topics & Concepts
Materials scienceOptoelectronicsX-ray photoelectron spectroscopyPlasmaDopingThin-film transistorResistive random-access memoryLayer (electronics)OxygenPlasma displayVoltageNanotechnologyElectrodeElectrical engineeringChemical engineeringChemistryQuantum mechanicsPhysicsOrganic chemistryEngineeringPhysical chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsCCD and CMOS Imaging Sensors