JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications
V. B. Naik, K. Yamane, Tae Young Lee, J. Kwon, R. Chao, J. H. Lim, N. L. Chung, Behtash Behin‐Aein, L. Y. Hau, D. Zeng, Y. Otani, C.J. Chiang, Yuanyuan Huang, Lu Pu, Seonhee Jang, W. P. Neo, Hemant Dixit, Stephen Goh, Eng-Huat Toh, T. Ling, J. Hwang, J. W. Ting, R. Löw, L. Zhang, C.G. Lee, N. Balasankaran, Funan Tan, K. W. Gan, Hee-Sun Yoon, G. Congedo, Johannes Mueller, B. Pfefferling, O. Kallensee, Andreas Vogel, V. Kriegerstein, T. Merbeth, C. S. Seet, Suan Ee Ong, Jianing Xu, J. Wong, Yuan You, S. T. Woo, T. H. Chan, Elgin Quek, S. Y. Siah
Abstract
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) with total reliability failures below the product life-time bit-failure-rate requirement for industrial-grade. Using design-process co-optimization, we show the extended performance to meet -40~150°C product operation for Auto-Grade-1 applications with stable read performance, ~47% reduced read power, data retention of 20yrs (0.1 PPM), read disturb rate of <1 PPM for ~1M cycles with 500Oe field, 1M endurance cycles, and stand-by magnetic immunity (SMI) of ~1400Oe at 25°C and ~500Oe at 150°C (0.1 PPM). With magnetic shield-in package solution, we demonstrate ~4kOe SMI at 25°C for 48hrs of field exposure.