CRYSTALLINE AND NANOSTRUCTURED MATERIALS BASED ON TRANSITION METAL DICHALCOGENIDES: SYNTHESIS AND ELECTRONIC PROPERTIES
A. Yu. Ledneva, Galina Chebanova, S. B. Artemkina, А. Н. Лавров
Abstract
The article reviews the current state of research of the synthesis, structural, electrophysical and spectroscopic properties of layered transition metal dichalcogenides (TMDs) of group 4-7 elements (M = Zr, Hf, Nb, Ta, Mo, W, Tc, Re; Q = S, Se, Te) depending on their morphology and modification. The changes in the properties of these compounds are considered upon the transition from crystalline materials to nanostructured and monolayer samples. We discuss "fine tuning" of electronic properties by introducing heteroatoms into the TMD structure: intercalation, when a heteroatom is introduced between layers, and isovalent and/or non-isovalent substitution in cationic and anionic sublattices. Practical applications of fine tuning of the properties of TMD based materials are discussed.