Red InGaN micro-light-emitting diodes (<b>&gt;</b>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
Panpan Li, Hongjian Li, Haojun Zhang, Yunxuan Yang, Matthew S. Wong, Cheyenne Lynsky, Mike Iza, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Abstract
We present efficient red InGaN 60 × 60 μm2 micro-light-emitting diodes (μLEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth. The red TJ μLEDs show a uniform electroluminescence. At a low current density of 1 A/cm2, the emission peak wavelength is 623 nm with a full-width half maximum of 47 nm. The peak external quantum efficiency (EQE) measured in an integrating sphere is as high as 4.5%. These results suggest a significant progress in exploring high efficiency InGaN red μLEDs using TJ technology.