Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors
Andrey Yu. Sosorev, Olga D. Parashchuk, Nikita Tukachev, Dmitry R. Maslennikov, Dmitry I. Dominskiy, Oleg V. Borshchev, Marina S. Polinskaya, Maxim S. Skorotetcky, Oleg G. Kharlanov, Dmitry Yu. Paraschuk
Abstract
Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this study, we suggest a novel promising strategy for suppression of dynamic disorder-tuning the molecular electrostatic potential. Specifically, we show that the intensities of the low-frequency (LF) Raman spectra for crystalline organic semiconductors consisting of π-isoelectronic small molecules (i.e. bearing the same number of π electrons)-benzothieno[3,2-b][1]benzothiophene (BTBT), chrysene, tetrathienoacene (TTA) and naphtho[1,2-b:5,6-b']dithiophene (NDT)-differ significantly, indicating significant differences in the dynamic disorder. This difference is explained by suppression of the dynamic disorder in chrysene and NDT because of stronger intermolecular electrostatic interactions. As a result, guidelines for the increase of the crystal rigidity for the rational design of high-mobility organic semiconductors are suggested.