Electrical control of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> tensor of the first hole in a silicon MOS quantum dot
S. D. Liles, Frederico Martins, Dmitry Miserev, A. A. Kiselev, Ian Thorvaldson, M. J. Rendell, Ik Kyeong Jin, Fay E. Hudson, Menno Veldhorst, Kohei M. Itoh, O. P. Sushkov, Thaddeus D. Ladd, Andrew S. Dzurak, A. R. Hamilton
Abstract
Hole spins are highly promising for spin-qubit technology due to the ability to electrically manipulate the hole $g$ tensor. However, gaps remain in our understanding of the mechanisms that couple hole spins to electric fields. Here, the authors investigate the effect of unintentional strain on the spin state of a single hole confined in a metal-oxide-semiconductor (MOS) quantum dot. Results show that the metal electrodes produce a nonuniform strain profile, resulting in nanometer-scale variations in the heavy-hole--light-hole splitting. Therefore, local electric fields can be used to displace the hole wavefunction relative to the nonuniform strain, allowing a mechanism for electric control of the hole $g$ tensor.