Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: high pixel density arrays demonstration
Juhyuk Park, Eun-Jeong Youn, Woojin Baek, Eun-Kyung Chu, Hyun Soo Kim, Dae‐Myeong Geum, Joon Pyo Kim, Bong Ho Kim, Song‐Hyeon Kuk, Hyeong‐Ho Park, Sanghyeon Kim
Abstract
In this study, we explored the size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs grown on Si substrates. We successfully demonstrated the fabrication of 4-inch wafer-scale InGaN/GaN micro-LEDs, showcasing the feasibility of large-scale production. Additionally, we presented the binary pixel display with 6 µm pitch, achieving a resolution of 4232 PPI. We also introduced a method of driving the display using PWM to linearly control and counteract the blue shift in peak wavelength caused by the QCSE and band-filling effect. Our research represents a significant milestone in the development of InGaN/GaN red micro-LEDs on Si substrates, establishing them as a key component for full-color micro-LED displays.