GaN-Based VCSELs with A Monolithic Curved Mirror: Challenges and Prospects
Tatsushi Hamaguchi
Abstract
In this paper, we introduce how gallium nitride-based (GaN-based) VCSELs with curved mirrors have evolved. The discussion starts with reviewing the fundamentals of VCSELs and GaN-based materials and then introducing the curved-mirror cavity’s principle and history and the latest research where the structure is applied to GaN-based materials to form VCSELs. We prepared these parts so that readers understand how VCSELs with this cavity work and provide excellent characteristics such as efficiency, life, stabilized mode behavior, etc. Finally, we discussed the challenges and prospects of these devices by touching on their potential applications.
Topics & Concepts
Gallium nitrideOptoelectronicsMaterials scienceOpticsMode (computer interface)Computer sciencePhysicsNanotechnologyHuman–computer interactionLayer (electronics)Semiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and DevicesPhotonic and Optical Devices