Analog/RF and Linearity Performance Assessment of a Negative Capacitance FinFET Using High Threshold Voltage Techniques
Rajeewa Kumar Jaisawal, Sunil Rathore, P. N. Kondekar, Navjeet Bagga
Abstract
The continued exploration of the ferroelectric-based negative capacitance field effect transistor (NCFET) for energy-efficient and higher current drivability merits has called for an investigation of the device compatibility for analog/RF applications. In this paper, we assessed the analog/RF and linearity performance of NC-FinFET by employing high threshold voltage (HVT) techniques. Such techniques are essential to suppress the leakage current and improve the performance in scaled devices. Using well-calibrated TCAD models, we present insight into the advent of incorporating three different HVT approaches: 1) increase in the channel doping ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rm{N_{ch^′}}$</tex-math></inline-formula> ), 2) drain underlap architecture (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dsu</sub> ), and 3) increase in the channel length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rm{L_{g'}}$</tex-math></inline-formula> ) to investigate the analog/RF behavior. Further, various linearity figure-of-merits (FoMs) has been examined using g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m2</sub> , g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m3</sub> , VIP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , VIP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , IIP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , IMD <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , and 1-dB compression point. We also varied <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rm{N_{ch^′}}$</tex-math></inline-formula> , L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dsu</sub> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rm{L_{g'}}$</tex-math></inline-formula> to optimize the proposed HVT techniques for optimum performance. Moreover, the Gummel symmetry test, as a linearity measure, has been done for the optimized HVT-NCFinFET to investigate the drain current symmetry. Thus, the obtained results serve as a design guideline for adopting the NC-FinFET pertaining to low-power RF applications.