Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors
Yitong Chen, Dingwei Li, Huihui Ren, Yingjie Tang, Kun Liang, Yan Wang, Fanfan Li, Chunyan Song, Jiaqi Guan, Zhong Chen, Xingyu Lu, Guangwei Xu, Wenbin Li, Shi Liu, Bowen Zhu
Abstract
Abstract Brain‐inspired neuromorphic computing hardware based on artificial synapses offers efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry of synaptic weight updates in reported artificial synapses have impeded achieving high accuracy in neural networks. Here, this work develops a synaptic memtransistor based on polarization switching in a two‐dimensional (2D) ferroelectric semiconductor (FES) of α‐In 2 Se 3 for neuromorphic computing. The α‐In 2 Se 3 memtransistor exhibits outstanding synaptic characteristics, including near‐ideal linearity and symmetry and a large number of programmable conductance states, by taking the advantages of both memtransistor configuration and electrically configurable polarization states in the FES channel. As a result, the α‐In 2 Se 3 memtransistor‐type synapse reaches high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks. This work opens new opportunities for using multiterminal FES memtransistors in advanced neuromorphic electronics.