Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device
Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sik Hwang, Jaeduk Lee, Byung Jin Cho
Abstract
We demonstrate for the first time that the use of an anti-ferroelectric film for the blocking layer of a charge trap flash (CTF) device significantly improves memory performance. The CTF device with the anti-ferroelectric blocking layer shows a larger program window and a faster program/erase speed without degradation of the retention and endurance characteristics, compared to the conventional CTF device with a typical high-k dielectric blocking layer. It is found that a capacitance boosting effect by the anti-ferroelectric layer is the origin of the performance enhancement.
Topics & Concepts
FerroelectricityCapacitanceMaterials scienceBlocking (statistics)Non-volatile memoryDielectricOptoelectronicsFlash memoryLayer (electronics)Negative impedance converterBoosting (machine learning)Trap (plumbing)Blocking effectFlash (photography)Electrical engineeringElectrodeComputer scienceNanotechnologyVoltageOpticsComputer hardwarePhysicsPsychologyEngineeringMeteorologyComputer networkMachine learningDevelopmental psychologyVoltage sourceQuantum mechanicsFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing