Interfacial modification mechanism of ALD-SiO2/4H-SiC heterojunction by synergistic nitrogen–oxygen-atmosphere RTA
Feiqing Huang, Li Zheng, Xinhong Cheng, Limin Yan, Jianhao Huang, Zhongyu Liu
Topics & Concepts
PassivationAtomic layer depositionHeterojunctionDangling bondAnnealing (glass)OxygenMaterials scienceOxideChemical engineeringNitrogenNanotechnologySiliconChemistryThin filmOptoelectronicsLayer (electronics)Composite materialOrganic chemistryMetallurgyEngineeringSemiconductor materials and devicesSilicon Carbide Semiconductor TechnologiesDiamond and Carbon-based Materials Research