Floating-Domain Integrated GaN Driver Techniques for DC–DC Converters: A Review
Xuchu Mu, Guangshu Zhao, Anyang Zhao, Yang Jiang, Man‐Kay Law, Makoto Takamiya, Pui‐In Mak, Rui P. Martins
Abstract
This paper presents the design challenges and advanced circuit techniques of integrated gate drivers for non-isolated buck converters using gallium nitride (GaN) devices to achieve fast switching and high conversion efficiency. Focusing on the essential tradeoff considerations, we first explain the detailed circuit-level issues of realizing normal and safe operations regarding integration feasibility, device safety, operation reliability, and power-stage loss alleviation when driving a GaN switch. Accordingly, we review the state-of-the-art techniques for improving various aspects of the performance, including on-chip bootstrapping enhancement, over-voltage and false-switching prevention, electromagnetic interference (EMI) noise suppression, and adaptive driving optimization. We further highlight the feature advantage of distinct techniques in specific performance/function aspects, aiming to bring GaN driver design insights and providing technical references regarding the technical superiority and limitations of improving the overall converter performance.