Compositional Transformation and Impurity‐Mediated Optical Transitions in Co‐Evaporated Cu<sub>2</sub>AgBiI<sub>6</sub> Thin Films for Photovoltaic Applications
Benjamin Putland, Marcello Righetto, Heon Jin, Markus Fischer, Alexandra J. Ramadan, Karl‐Augustin Zaininger, Laura M. Herz, Harry C. Sansom, Henry J. Snaith
Abstract
Abstract Quaternary copper‐silver‐bismuth‐iodide compounds represent a promising new class of wide‐bandgap (2 eV) semiconductors for photovoltaic and photodetector applications. In this study, vapor phase co‐evaporation is utilized to fabricate Cu 2 AgBiI 6 thin films and photovoltaic devices. The findings show that the properties of vapor‐deposited films are highly dependent upon processing temperature, exhibiting increased pinhole density and transforming into a mixture of quaternary, binary, and metallic phases depending on the post‐deposition annealing temperature. This change in phase is accompanied by an enhancement in photoluminescence (PL) intensity and charge‐carrier lifetime, along with the emergence of an additional absorption peak at high energy (≈3 eV). Generally, increased PL is a desirable property for a solar absorber material, but this change in PL is ascribed to the formation of CuI impurity domains, whose defect‐mediated optical transition dominates the emission properties of the thin film. Via optical pump terahertz probe spectroscopy, it is revealed that CuI impurities hinder charge‐carrier transport in Cu 2 AgBiI 6 thin films. It is also revealed that the predominant performance limitation in Cu 2 AgBiI 6 materials is the short electron‐diffusion length. Overall, the findings pave the way for potential solutions to critical issues in copper‐silver‐bismuth‐iodide materials and indicate strategies to develop environmentally compatible wide‐bandgap semiconductors.