Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO<sub><i>x</i></sub> RRAM
Fabia F. Athena, Matthew P. West, Jinho Hah, Riley Hanus, Samuel Graham, Eric M. Vogel
Abstract
Optimum Ti doping provides a trade-off between the forming voltage and the switching window. A physical explanation of the observed forming and resistive switching characteristics has been provided.
Topics & Concepts
Materials scienceResistive random-access memoryDopingResistive touchscreenOptoelectronicsVoltageEngineering physicsNanotechnologyElectrical engineeringEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering