A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
J. Ajayan, D. Nirmal, R. Ramesh, Sandip Bhattacharya, Shubham Tayal, L. M. I. Leo Joseph, Laxman Raju Thoutam, D. Ajitha
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsSchottky diodeHeterojunctionFabricationAerospaceWide-bandgap semiconductorDiodeGallium nitrideTransistorSensitivity (control systems)SemiconductorSchottky barrierNanotechnologyElectronic engineeringElectrical engineeringEngineeringVoltageLayer (electronics)Alternative medicineMedicineAerospace engineeringPathologyGas Sensing Nanomaterials and SensorsGaN-based semiconductor devices and materialsZnO doping and properties