A Single-Electron Injection Device for CMOS Charge Qubits Implemented in 22-nm FD-SOI
Imran Bashir, Elena Blokhina, Ali Esmailiyan, Dirk Leipold, Mike Asker, Eugene Koskin, Panagiotis Giounanlis, Hongying Wang, Dennis Andrade‐Miceli, Andrii Sokolov, Anna Kozioł, Teerachot Siriburanon, Robert Bogdan Staszewski
Abstract
This letter presents a single-electron injection device for position-based charge qubit structures implemented in 22-nm fully depleted silicon-on-insulator CMOS. Quantum dots are implemented in local well areas separated by tunnel barriers controlled by gate terminals overlapping with a thin 5-nm undoped silicon film. Interface of the quantum structure with classical electronic circuitry is provided with single-electron transistors that feature doped wells on the classic side. A small 0.7 ×0.4 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> elementary quantum core is co-located with control circuitry inside the quantum operation cell which is operating at 3.5 K and a 2-GHz clock frequency. With this apparatus, we demonstrate a single-electron injection into a quantum dot.