Manipulating Berry curvature of SrRuO <sub>3</sub> thin films via epitaxial strain
Di Tian, Zhiwei Liu, Shengchun Shen, Zhuolu Li, Yu Zhou, Hongquan Liu, Hanghui Chen, Pu Yu
Abstract
Significance Berry phase and Berry curvature contribute significantly to a large collection of intriguing properties in quantum materials, particularly intrinsic anomalous Hall effect (AHE). One of the central steps is to explore the evolution of Berry curvature and related properties under external stimulus. Here, we report that the epitaxial strain effectively tunes the Berry curvature and the magnitude and sign of corresponding intrinsic AHE in SrRuO 3 films, which are due to modification of electronic structures induced by strain. We further reveal the Berry curvature can also be modulated with the rotation of magnetization, resulting in an exotic nonmonotonic change of anomalous Hall resistively. Our findings suggest that epitaxial strain provides a nice approach for manipulating Berry curvature and its related physics.