Doping Strategies in Sb<sub>2</sub>S<sub>3</sub> Thin Films for Solar Cells
Purevlkham Myagmarsereejid, Malaika Ingram, Munkhbayar Batmunkh, Yu Lin Zhong
Abstract
Abstract Sb 2 S 3 is an attractive solar absorber material that has garnered tremendous interest because of its fascinating properties for solar cells including suitable band gap, high absorption coefficient, earth abundance, and excellent stability. Over the past several years, intensive efforts have been made to enhance the photovoltaic efficiencies of Sb 2 S 3 solar cells using many promising approaches including interfacial engineering, surface passivation, additive engineering, and band‐gap engineering of the charge transport layers and active light absorbing Sb 2 S 3 materials. Recently, doping strategies in Sb 2 S 3 light absorbers have gained attention as they promise to play important roles in controlling band gap, regulating film morphology, and passivating grain boundaries, and thus resulting in enhanced carrier transport, which is one of the most challenging issues in this cutting‐edge research field. In this review, after a brief introduction to Sb 2 S 3 , an overview of Sb 2 S 3 solar cells and their fundamental properties are provided. Recent advances in doping strategies in Sb 2 S 3 thin films and solar cells are then discussed to provide in‐depth understanding of the effects of various dopants on the photovoltaic properties of Sb 2 S 3 materials. In conclusion, the personal perspectives and outlook to the future development of Sb 2 S 3 solar cells are provided.