Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications
G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
Topics & Concepts
High-electron-mobility transistorOptoelectronicsMaterials scienceBreakdown voltageTerahertz radiationSubstrate (aquarium)NitrideGallium nitrideNanoelectronicsThreshold voltageAND gateVoltageTransistorLogic gateElectronic engineeringNanotechnologyElectrical engineeringEngineeringLayer (electronics)OceanographyGeologyGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties