Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics
Nathan Ip, Nima Nejadsadeghi, Carlos Fonseca, Norifumi Kohama, Kimio Motoda
Abstract
In semiconductor direct wafer bonding process, two silicon wafers are mechanically joined together by interfacial adhesion under room conditions. Accurate alignment between the two wafers along the bond interface is critical to achieve high device performances. This paper uses a coupled solid and fluid mechanics simulation model to study the wafer bonding dynamics. The results of this simulation model are studied in detail and compared against experimental data. This simulation model confirms the role of air viscosity in wafer bonding process. This model can help optimize key hardware features to improve process performance such as post-bond distortion.
Topics & Concepts
WaferWafer bondingMaterials scienceProcess (computing)Mechanical engineeringDistortion (music)Electronic engineeringComputer scienceNanotechnologyOptoelectronicsEngineeringAmplifierOperating systemCMOS3D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesAdvanced Surface Polishing Techniques