Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices
Robert Mroczyński, Monika Ożga, M. Godlewski, B.S. Witkowski
Abstract
This work presents the preliminary research on Metal-Insulator-Metal (MIM) structures containing copper oxide (CuO) layers for memory applications. Structural and optical investigations of fabricated materials have shown distinct differences in chemical compositions of ‘as grown’ and thermally annealed CuO, i.e., ‘HT + RTP’ film. Those differences strongly influence the electrical behavior of fabricated MIM structures. The examined electrical performance of fabricated devices revealed stability and repeatability of the HRS/LRS ratio over time. The presented results have demonstrated the possible application of CuO thin films in low-power and high-speed Resistive Random-Access Memory (RRAM) devices.