Enhanced Organic Thin-Film Transistor Stability by Preventing MoO<sub>3</sub> Diffusion with Metal/MoO<sub>3</sub>/Organic Multilayered Interface Source-Drain Contact
Zhenxin Yang, Chunhua Guo, Lingping Qin, Juntao Hu, Pengyan Luan, Zheng Liang, Xiaoliang Li, Huaiyi Ding, Dengke Wang, Tao Zhang, Qiang Zhu, Zheng‐Hong Lu
Abstract
The source-drain electrode with a MoO3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thin-film transistors (OTFTs) from commercialization. However, this method raises many concerns because MoO3 might diffuse into organic materials, which causes device instability. In this work, we observed a significant device stability degradation by damaging on/off switching performance caused by MoO3 diffusion. To prevent the MoO3 diffusion, a source-drain electrode with a multilayered interface contact (MIC) consisting of a top-down stack of metal, MoO3 IML, and organic buffer layer (OBL) is proposed. In the MIC device, the MoO3 IML serves well for its intended functions of reducing contact resistance and suppressing minority carrier injection to the OTFT channel. The inclusion of OBL to the MIC helps block MoO3 diffusion and thereby leads to better device stability and an increased on/off ratio. Through combinations with several organic compounds as a buffer layer, the MoO3 diffusion related electrical behaviors of OTFTs are systematically studied. Key parameters related to MoO3 diffusion such as the Fick coefficient and bias-stress stability such as carrier trapping time are extracted from numerical device analysis. Finally, we summarize a general rule of material selection for making robust source-drain contact.