Two-Dimensional MoS<sub>2</sub> on p-Type GaN for UV–Vis Photodetectors
Yang Yufei, Wenhong Sun
Abstract
In this study, we employ the sol–gel method to fabricate MoS 2 films with a controllable thickness. The resulting colloidal configuration can be directly spin-coated onto various substrates (e.g., Si, SiO 2, GaN, and sapphire), leading to the formation of smooth MoS 2 films after annealing. Based on this technique, we construct a two-dimensional MoS 2 /p-GaN van der Waals (vdWs) heterostructure photodetector comprising n-MoS 2 and p-GaN. The high crystal quality of MoS 2 and the internal electric field of the MoS 2 /p-GaN heterostructure p–n junction enable efficient separation of photogenerated carriers, resulting in enhanced exciton collection by the electrode at 416 nm. This configuration achieves a high photo response of 35.6 A/W and a rapid response time of 200 ms, surpassing that of a single MoS 2 thin film. Furthermore, when combined with p-GaN, the photodetector’s response spectrum extends to the ultraviolet region, exhibiting an impressive 8.4 A/W light response and a quick response time of 280 ms. This demonstrates a favorable synergistic effect. These exceptional properties establish n-MoS 2 /p-GaN heterostructure photodetectors as highly competitive next-generation optoelectronic devices.