Cascadable in-memory computing based on symmetric writing and readout
Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, Jingjing Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang‐Wook Cheong, Haijun Zhang, Shi‐Jun Liang, Feng Miao
Abstract
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a previously unimplemented symmetric write and readout mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe 3 GeTe 2 and WTe 2 . We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved using unconventional charge–to– z -spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z -spin–to–charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.