First principles investigation of photoelectric properties of Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si100.gif"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si101.gif"><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math> Doped with group IV elements (Si,Ge,Sn)
Miao Yu, Bo Peng, Kai Sun, Jiangang Yu, Lei Yuan, Jichao Hu, Yuming Zhang, Renxu Jia
Topics & Concepts
GermaniumMaterials scienceDopingDopantBand gapSemiconductorOptoelectronicsSiliconGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties