Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications
Biswajit Jana, Ayan Roy Chaudhuri
Abstract
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. We discuss the recent research progress on controlling oxygen vacancy concentration in metal oxide thin films and its impact on their resistive switching properties for application in electronic memory and neuromorphic computing devices.
Topics & Concepts
Neuromorphic engineeringResistive random-access memoryMaterials scienceOxygenOxideThin filmOptoelectronicsResistive touchscreenNon-volatile memoryNanotechnologyEngineering physicsComputer scienceElectrical engineeringEngineeringPhysicsArtificial intelligenceArtificial neural networkMetallurgyVoltageQuantum mechanicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices