Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Konstantin O. Petrosyants, D. S. Silkin, Dmitriy A. Popov
Abstract
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, Ioff, SS, Vth, and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics.
Topics & Concepts
Materials scienceNanowireOptoelectronicsVery-large-scale integrationTransistorThermalTechnology CADMOSFETCharacterization (materials science)Electronic engineeringField-effect transistorElectrical engineeringNanotechnologyVoltageEngineeringCADPhysicsMeteorologyEngineering drawingAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies