GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
Kai Fu, Shisong Luo, Houqiang Fu, Kevin Hatch, Shanthan Reddy Alugubelli, Hanxiao Liu, Tao Li, Mingfei Xu, Zhaobo Mei, Ziyi He, Jingan Zhou, Cheng Chang, F. A. Ponce, R. J. Nemanich, Yuji Zhao
Abstract
We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.