Electrical properties of amorphous Zn–Sn–O thin films depending on composition and post-deposition annealing temperature near crystallization temperature
Wha-Young Kim, Sukin Kang, Yonghee Lee, Sahngik Aaron Mun, Jinheon Choi, Sunjin Lee, Cheol Seong Hwang
Abstract
This study investigated the crystallization and electrical properties of atomic layer deposited Zn–Sn–O (ZTO) thin films. Sn 42 at% ZTO thin film showed the best thermal stability and electrical properties due to a change in the sub-gap states.
Topics & Concepts
Materials scienceCrystallizationAnnealing (glass)Amorphous solidThin filmThermal stabilityChemical engineeringElectrical resistivity and conductivityAtomic layer depositionAnalytical Chemistry (journal)MetallurgyCrystallographyNanotechnologyChromatographyElectrical engineeringEngineeringChemistryThin-Film Transistor TechnologiesZnO doping and propertiesElectrical and Thermal Properties of Materials