First-Principles Study of Bi<sup>3+</sup>-Related Luminescence and Electron and Hole Traps in (Y/Lu/La)PO<sub>4</sub>
Zhaoyang Feng, Bibo Lou, Min Yin, Yau Yuen Yeung, Hong‐Tao Sun, Chang‐Kui Duan
Abstract
Bismuth ion-doped phosphate crystals have shown rich luminescence phenomena. However, the complexity and variety of Bi3+-related transitions bring great challenges to the understanding of the underlying mechanisms, rendering it hard to rationally design new phosphors and optimize their performance. In this work, we perform first-principles calculations based on the generalized gradient approximation of density functional to obtain the excited state equilibrium geometric structures and then calculate the electronic structures for various Bi3+-related excited states in phosphates RPO4:Bi3+ (R = Y, Lu, La) by utilizing the hybrid density functional method. The experimentally measured excitation and emission features are well interpreted by our theoretical calculations. Specifically, we reveal that the emission in LaPO4:Bi3+ is of charge transfer nature, whereas the dominant emission in YPO4:Bi3+ or LuPO4:Bi3+ is the characteristic A band emission. Trapped holes above the valence band maximum due to intrinsic defects are deemed to play a role in the charge-transfer emission of LaPO4. Our calculations show that the excited state of the Bi3+ pair in YPO4 or LuPO4 is (Bi3+–Bi3+)*, rather than Bi2+–Bi4+. Such a Bi3+ pair contributes to the longer wavelength emission. Furthermore, our calculations on charge transition levels show that Bi3+ ions can act as electron and hole traps in RPO4 (R = Y, Lu, La). Our work indicates that first-principles calculations can be useful in exploring the diverse luminescence processes in Bi3+-doped inorganic insulators.