Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off
Jianqi Dong, Baoyu Wang, Xianshao Zou, Wei Zhao, Chenguang He, Longfei He, Qiao Wang, Zhitao Chen, Shuti Li, Kang Zhang, Xingfu Wang
Topics & Concepts
Materials scienceLasing thresholdOptoelectronicsEpitaxyNanowireHeterojunctionNitrideSapphireIndium gallium nitrideDry etchingGallium nitrideNanotechnologyEtching (microfabrication)LaserWavelengthOpticsLayer (electronics)PhysicsGaN-based semiconductor devices and materialsGa2O3 and related materialsNanowire Synthesis and Applications