Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection
Hirotsugu Kobayashi, Kosuke Sato, Yusuke Okuaki, TaeGi Lee, Tomohiro Morishita, Hiromasa Goto, Naohiro Kuze
Abstract
We fabricated sub-230-nm (far UV-C) light emitting diodes (LEDs) on a single-crystal AlN substrate. With 20 quantum well cycles implemented to enhance carrier injection into the active layers, over 1-mW output power (1.4 and 3.1 mW for 226- and 229-nm LEDs, respectively) was obtained under 100-mA operation. The maximum output power reached 21.1 mW for the single-chip 229-nm LED operating at 700 mA, without significant drooping. The forward voltage for both sub-230-nm LEDs operating at 100 mA was low (5.9 V) due to their low resistances and ideal Ohmic contacts between metal and semiconductor components. Additionally, wall plug efficiencies were 0.24% and 0.53% for the 226- and 229-nm LEDs, respectively. The lifetime of the 226-nm LED while operating at 25 °C reached over 1500 h and did not show current leakage, even after 1524 h. This long lifetime will be achieved by improving carrier injection due to many quantum wells, using a high-quality AlN substrate and achieving high wall plug efficiency.