Chlorine doping of MoSe<sub>2</sub> flakes by ion implantation
Sławomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani‐Asl, René Hübner, Juanmei Duan, Yidan Wei, Divanshu Sharma, Dietrich R. T. Zahn, René Ziegenrücker, Ulrich Kentsch, Arkady V. Krasheninnikov, M. Helm, Shengqiang Zhou
Abstract
Controlled doping of MoSe<sub>2</sub> realized by low-energy ion implantation and millisecond-range intense pulse light annealing.
Topics & Concepts
Materials scienceDopingRaman spectroscopyIonIon implantationFluenceAnalytical Chemistry (journal)Annealing (glass)SemiconductorAmorphous solidOptoelectronicsChemistryCrystallographyOpticsOrganic chemistryComposite materialChromatographyPhysics2D Materials and ApplicationsMXene and MAX Phase MaterialsAdvanced Memory and Neural Computing