Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)
L. Grenouillet, T. François, J. Coignus, S. Kerdilès, Nicolas Vaxelaire, C. Carabasse, Furqan Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, Viktor Havel, Stefan Slesazeck, F. Gaillard, Uwe Schroeder, Thomas Mikolajick, E. Nowak
Abstract
10nm Si-implanted HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled .28μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . capacitors demonstrate excellent endurance (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles measured at 4 V, extrapolated to be 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> - based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> .