Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
G. Aglieri Rinella, G. Alocco, M. Antonelli, Roberto Baccomi, S. Beolè, Mihail Bogdan Blidaru, Bent Benedikt Buttwill, E. Buschmann, P. Camerini, F. Carnesecchi, M. Chartier, Yongjun Choi, M. Colocci, G. Contin, D. Dannheim, D. De Gruttola, Manuel Del Rio Viera, A. Dubla, Antonello di Mauro, Maurice Calvin Donner, G. H. Eberwein, J. Egger, L. Fabbietti, Finn Feindt, Kunal Gautam, Roman Gernhaeuser, J. Glover, L. Gonella, Karl Gran Grodaas, Ingrid-Maria Gregor, H. Hillemanns, Lennart Huth, Armin Ilg, А. Исаков, D. M. Jones, Antoine Junique, Jetnipit Kaewjai, M. Keil, Jiyoung Kim, Alex Kluge, C. Kobdaj, Artem Kotliarov, Kritsada Kittimanapun, F. Křížek, Gabriela Kucharska, S. Kushpil, P. La Rocca, Natthawut Laojamnongwong, L. Lautner, R. C. Lemmon, C. Lemoine, Long Li, F. Librizzi, J. Liu, A. Macchiolo, M. Mager, D. Marras, P. Martinengo, S. Masciocchi, S. Mattiazzo, Marius Wilm Menzel, A. Mulliri, Alexander Musta, Mia Rose Mylne, F. Piro, A. Rachevski, M. Rasa, Karoliina Rebane, F. Reidt, R. Ricci, Sara Ruiz Daza, G. Saccà, I. Sanna, Valerio Sarritzu, Judith Schlaadt, David Schledewitz, G. Scioli, S. Senyukov, Adriana Simancas, W. Snoeys, Simon Spannagel, M. Šuljić, A. Sturniolo, N. Tiltmann, A. Trifirò, G. L. Usaı́, T. Vaňát, Jacob Bastiaan Van Beelen, László Z. Varga, M. Verdoglia, Gianpiero Vignola, A. Villani, Haakan Wennloef, Jonathan Caspar Witte, Rebekka Bettina Wittwer
Abstract
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μ m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1 0 16 1 MeV n eq cm −2 . Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55 Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.