Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode
Xuexia Zhang, Yanfang Lou, Tuochen Gong, Guangming Wang, Jing Yao, Qing Yong, Tonghua Peng, Jian Yang, Chunjun Liu
Abstract
Substrate TSDs propagate into an epilayer and cause breakdown holes.
Topics & Concepts
Materials scienceSchottky barrierOptoelectronicsSchottky diodeDiodeMetal–semiconductor junctionComposite materialSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesIntegrated Circuits and Semiconductor Failure Analysis