World-most energy-efficient MRAM technology for non-volatile RAM applications
Tae Young Lee, J. M. Lee, Min Kyu Kim, Junseok Oh, Jeong‐Whan Lee, Hongsil Jeong, P. H. Jang, M. K. Joo, Kyung‐Soo Suh, S. H. Han, D.-E. Jeong, T. Kai, J. H. Jeong, J.-H. Park, J. H. Lee, Y. H. Park, Eun-Soo Chang, Y. K. Park, Hong‐Jae Shin, Yumi Ji, S. H. Hwang, K. T. Nam, B. S. Kwon, M. K. Cho, B. Y. Seo, Y. J. Song, G.H. Koh, Kyoobin Lee, Ji‐Hyun Lee, Giho Jeong
Abstract
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 16 Mb and best-in-class active power of 14 mW (read) and 27 mW (write). By extensive package testing, endurance over 1E14 cycles at - 25 °C and 10-years data retention at 89 °C have also been verified. Extending 28-nm eMRAM technology to 14-nm FinFET resulted in 33% area scaling and 2.6× faster read cycle time. This proves the potential of eMRAM technology as a low-leakage working memory solution for SoC applications.