Optimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate
Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Byung‐Gook Park, Jong‐Ho Lee
Topics & Concepts
Materials scienceTransconductanceOptoelectronicsChannel (broadcasting)Field-effect transistorNoise (video)TransistorFlicker noiseSIGNAL (programming language)TransducerInfrasoundVoltageAcousticsElectrical engineeringNoise figurePhysicsCMOSComputer scienceEngineeringArtificial intelligenceProgramming languageImage (mathematics)AmplifierGas Sensing Nanomaterials and SensorsAnalytical Chemistry and SensorsTransition Metal Oxide Nanomaterials