Inherent electron and hole trapping in amorphous phase-change memory materials: Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Konstantinos Konstantinou, Stephen R. Elliott, Jaakko Akola
Abstract
Charge trapping is energetically favourable for electronic states in the band gap of glassy phase-change memory materials. Intrinsic near-linear triatomic environments in defective-octahedral configurations can capture extra electrons and holes.
Topics & Concepts
Materials scienceTrappingElectronAmorphous solidPhase (matter)OctahedronCondensed matter physicsCharge (physics)Band gapAtomic physicsMolecular physicsCrystallographyCrystal structureOptoelectronicsPhysicsEcologyChemistryQuantum mechanicsBiologyPhase-change materials and chalcogenidesNonlinear Optical Materials StudiesChalcogenide Semiconductor Thin Films