MoO <sub>3</sub> –MoS <sub>2</sub> vertical heterostructures synthesized via one-step CVD process for optoelectronics
Yuxi Guo, Lixing Kang, Pin Song, Qingsheng Zeng, Bijun Tang, Jiefu Yang, Yao Wu, Dan Tian, Manzhang Xu, Wu Zhao, Xiaofei Qi, Zhiyong Zhang, Zheng Liu
Abstract
Abstract The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO 3 –MoS 2 are successfully synthesized on SiO 2 /Si substrates via one-step chemical vapor deposition process. The vertical MoO 3 –MoS 2 heterostructures exhibit the average size of ∼20 μ m and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO 3 –MoS 2 heterostructures presents responsivity of 5.41 × 10 3 A W −1 , detectivity of 0.89 × 10 10 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO 3 –MoS 2 vertical heterostructures for electronic and optoelectronic applications.