Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)<sub>2</sub>] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)
Rachel L. Wilson, Thomas J. Macdonald, Chieh‐Ting Lin, Shengda Xu, Alaric Taylor, Caroline E. Knapp, Stefan Guldin, Martyn A. McLachlan, Claire J. Carmalt, Christopher S. Blackman
Abstract
], which unlike previous examples in literature is synthesised using the readily commercially available dialkylaminoalkoxide ligand dmamp' (2-dimethylamino-2-methyl-1-propanolate). The use of vapour deposited NiO as a blocking layer in a solar-cell device is presented, including benchmarking of performance and potential routes to improving performance to viable levels.
Topics & Concepts
Non-blocking I/ONickel oxideNickelChemical vapor depositionMaterials scienceOxideBand gapThin filmChemical engineeringNanotechnologyInorganic chemistryOptoelectronicsChemistryMetallurgyOrganic chemistryCatalysisEngineeringThin-Film Transistor TechnologiesOrganic Electronics and PhotovoltaicsTransition Metal Oxide Nanomaterials