The mechanism of elastic and electronic properties of Tungsten Silicide (5/3) with vacancy defect from the first-principles calculations
Dongzhi Li, Xudong Zhang, Jiaying Chen, Yang Liu, Feng Wang
Topics & Concepts
Vacancy defectMaterials scienceTungstenSilicideDuctility (Earth science)BrittlenessSiliconElectronic structureElastic modulusEnthalpyCondensed matter physicsCrystallographyMetallurgyThermodynamicsComposite materialChemistryPhysicsCreepIntermetallics and Advanced Alloy PropertiesSemiconductor materials and interfacesMXene and MAX Phase Materials