InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
Sergii Golovynskyi, Oleksandr I. Datsenko, L. Seravalli, Giovanna Trevisi, P. Frigeri, Baikui Li, Danying Lin, Junle Qu
Topics & Concepts
Quantum dotWetting layerMaterials scienceOptoelectronicsPhotocurrentHeterojunctionPhotoluminescenceLuminescenceDiodeBand gapActive layerLayer (electronics)NanotechnologyThin-film transistorSemiconductor Quantum Structures and DevicesAdvanced Semiconductor Detectors and MaterialsQuantum Dots Synthesis And Properties