A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
Abdelaziz Hamani, Alexandre Siligaris, B. Blampey, Cédric Dehos, José Luis González
Abstract
In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
Topics & Concepts
CMOSLow-noise amplifierNoise figureElectrical engineeringAmplifierBandwidth (computing)OptoelectronicsSilicon on insulatorWidebandPhysicsMaterials scienceEngineeringTelecommunicationsSiliconRadio Frequency Integrated Circuit DesignMicrowave Engineering and WaveguidesSemiconductor materials and devices